Silicon-on-Insulator (SOI) Sensors – No P-N Junctions
High temperature capability – Continuous operation at temperatures up to 1000°F (538°C).
Insensitive to EMI – Devices with no other, active electronic components will operate in a field of 200 Volts per meter.
Insensitive to ESD
Integrated Sensor of Mono-Crystalline Silicon
High reliability – Calculated MTBF of three million (3,000,000) hours for the sensor itself.
Long term stability – Long term drift less than point one percent (0.1%) per year.
High Accuracy – The typical static error band – inclusive of non-linearity, hysteresis and repeatability – of a Kulite pressure sensor is less than point one percent of full scale (0.1%FS).
Leadless Sensors the Elimination of Gold Leads and Associated Mechanical Joints
High tolerance to shock and vibration
High temperature capability
Small size and low weight – Sensor sizes from .030 x .030 through .1 x .1 inch allow for ultra-miniature packages.
Low sensitivity to the effects of vibration and acceleration – The very low mass of these ultra-miniature sensing elements translates into very high natural frequencies. The low mass also renders them mechanically insensitive to shocks and vibrations until these reach very high levels.
In addition, Kulite has developed and patented a new sensor which eliminates the effects of extremely high vibration on the output signal of the transducer.